How doping molybdenum with vanadium could supercharge 2D semiconductor electronics

Researchers have discovered that adding vanadium to ultra-thin molybdenum disulfide prevents defect saturation, allowing the material to handle energy more predictably for use in faster sensors and more efficient solar cells. | Tata Institute of Fundamental Research Hyderabad,University of Hyderabad,semiconductors,2D semiconductors,doping | Latest science and technology news, research breakthroughs, and innovations from India’s top institutions. Recent stories and articles on advancements in science, engineering, technology, ecology, humanities, social sciences, and policy. Discover cutting-edge developments and expert insights on Research Matters, your trusted source for comprehensive science and research news. Scientists at the University of Hyderabad and the Tata Institute of Fundamental Research (TIFR) have discovered a way to tune the behaviour of one of the world’s most promising ultra-thin materials. By adding tiny amounts of the metal vanadium to a t... [2483 chars]